Global high-k and CVD/ALD metal precursors market was worth USD 482.1 Million in 2020. It is expected to grow at a 6.2% compound annual growth rate (CAGR), between 2021 and 2028. Low thermal stability of metal-organic compounds is responsible for the market's growth. Companies that are involved in extensive R&D are expected to improve copper metalization processes. This will increase the demand for first-row metal films (conducting), and dielectric (insulating), precursors to be used on microelectronic devices. The COVID-19 pandemic in 2020 had a negative impact on several industries around the globe, including the ALD/CVD and high-k metal precursors markets. Responding to the COVID-19 Pandemic was the main challenge facing the semiconductor industry in 2020.
Due to COVID-19-induced lockdowns, most manufacturing plants around the globe were shut down or closed. Due to lockdowns and related supply chain disruptions, the semiconductor industry saw a decline in the first half 2020. The factories were able to reopen in the second half, but it took some time for the market for high-k and ALD/CVD metallic precursors to return to pre-COVID-19 levels. It is expected that the market will rebound at a slower rate. This was a significant challenge for most industry players.
The demand for materials with higher dielectricities has increased due to the increasing need to quickly access and store data. It is expected that the Atomic Layout (ALD), of noble metals such as ruthenium and rhodium will be a hot area for research. ALD technology's rapid advancement has led to a high demand for thin-film materials in new industrial applications. These factors will drive market growth during the forecast period.
It is crucial to select and design the right metal-organic precursors in order to develop new Chemical Vopor Deposition (CVD), processes. Buyers prefer insulators with high dielectric constants as they play several critical roles in modern semiconductor devices, including decreasing power consumption in Metal-Insulator-Semiconductor (MIS) field-effect transistors. Over the forecast period, there will be an increase in demand for metal precursors such as aluminum and hafnium, cobalt. titanium, tantalum. tungsten, and cobalt.
These precursors can be used to make thin metallic films. ALD has seen significant developments due to its use in non-semiconductor regions and the rapid growth in the semiconductor industry. Atomic layer deposit is a cutting-edge method for depositing ultra-thin films in controlled ways. ALD provides remarkable conformity in deposition in high-aspect ratio structures and thickness control at the Angstrom levels.
It is difficult to select the right precursor for next-generation scaled memories and Metal Oxide Semiconductor Field Effect Transistors devices (MOSFETs). These semiconductor devices require thin conformal films with high aspect ratios and low deposition temperatures. High-temperature techniques for deposition can lead to complexities like reduced adhesion of nonuniform layers and interlayer atomic diffusion.
Technology-based segmentation of the high-k/CVD ALD metal precursors market includes interconnect, capacitors and gates. Precursors with high-k are mostly used to produce gates and capacitors, while metal precursors can be used to make electrodes and interconnects. In 2020, the interconnect segment was worth USD 232.5 million. Interconnect is a technique for fabricating with Copper (Cu), or Aluminum (Al). It uses Copper (Cu), or Aluminium (Al), to pattern metals and introduce barrier metal layers to protect Silicon (Si), from possible damage in an Integrated Circuit. High-k dielectric layers are increasingly prevalent in certain electronic components and devices, such as advanced Metal-Insulator-Metal (MIM) capacitors, DRAMs, organic thin-film transistors, OLEDs, and non-volatile types of memory devices. Transistor scaling is possible using high-k metal gate technology.
From 2021 to 2028, the gate segment will experience the highest CAGR at 10.4%. The ALD technique for producing thin films using high-k materials like Al2O3, Ta2O5, and HfO2, has received significant research.
Combining high-k metal gate and dielectric technologies can significantly reduce gate leakage when the transistor size is reduced to 1.0 nm. High-k Metal Gate stacks are used by semiconductor companies in MOSFETs that use CMOS technology. This allows for device scaling of up to 45 nm or below. Intel's major technologies include enhanced channel strain, hafnium based and high-k electric gate and dual work-function metallic replacement gate.
In 2020, the Asia Pacific region accounted for the largest market share and was valued at USD 319.4 million. This region will continue to dominate the market over the forecast period due to factors like high demand in China for electronic products and continued outsourcing to China of electronic equipment production. Due to the growing demand for electronic products in Brazil, India, China, and China (BRIC), the region's market growth is expected to be significant.
R&D in nanotechnologies, which are used in the semiconductor industry, is the key trend that favors market growth in the U.S. The country's market growth will be driven by the rising demand for semiconductor devices such as 3D-stacked ICs with multifaceted architecture, manufactured using cost-effective, seamless manufacturing processes such as ALD.
Air Liquide, Air Products & Chemicals, Inc., Praxair, Merck KGaA, and Dow Chemical are some of the most prominent players in this market. These companies use acquisitions and partnerships to increase their presence in the global market. Merck KGaA bought Sigma-Aldrich in November 2015 to expand its life science business and increase its portfolio of sterility test products. Merck KGaA acquired SAFC Hitech to combine it with its Performance Materials business. It was expected that the SAFC Hitech business would continue to operate as part of its Integrated Circuits unit. Beneq, a provider of ALD equipment and thin film coating services, entered into a strategic partnership agreement (CPI) with The Centre for Process Innovation to make use of the ALD technique for printed electronics applications. The following are some of the major players in the global high-k market for CVD ALD metal precursors:
Air Liquide
Air Products & Chemicals, Inc.
Praxair
Linde
Dow Chemical
Up Market Research published a new report titled “High-k And CVD ALD Metal Precursors Market research report which is segmented by Technology (Capacitors, Gates, Interconnect), By Players/Companies Dow Chemical, Linde, Air Products & Chemicals Inc, Air Liquide, Praxair”. As per the study the market is expected to grow at a CAGR of XX% in the forecast period.
Report Attributes | Report Details |
Report Title | High-k And CVD ALD Metal Precursors Market Research Report |
By Technology | Capacitors, Gates, Interconnect |
By Companies | Dow Chemical, Linde, Air Products & Chemicals Inc, Air Liquide, Praxair |
Regions Covered | North America, Europe, APAC, Latin America, MEA |
Base Year | 2020 |
Historical Year | 2018 to 2019 (Data from 2010 can be provided as per availability) |
Forecast Year | 2028 |
Number of Pages | 225 |
Number of Tables & Figures | 158 |
Customization Available | Yes, the report can be customized as per your need. |
The report covers comprehensive data on emerging trends, market drivers, growth opportunities, and restraints that can change the market dynamics of the industry. It provides an in-depth analysis of the market segments which include products, applications, and competitor analysis.
The market is segmented by Technology (Capacitors, Gates, Interconnect).
High-k And CVD ALD Metal Precursors Market research report delivers a close watch on leading competitors with strategic analysis, micro and macro market trend and scenarios, pricing analysis and a holistic overview of the market situations in the forecast period. It is a professional and a detailed report focusing on primary and secondary drivers, market share, leading segments and geographical analysis. Further, key players, major collaborations, merger & acquisitions along with trending innovation and business policies are reviewed in the report.
Key Benefits for Industry Participants & Stakeholders:
Based on region, the market is segmented into North America, Europe, Asia Pacific, Latin America and Middle East & Africa (MEA). North America region is further bifurcated into countries such as U.S., and Canada. The Europe region is further categorized into U.K., France, Germany, Italy, Spain, Russia, and Rest of Europe. Asia Pacific is further segmented into China, Japan, South Korea, India, Australia, South East Asia, and Rest of Asia Pacific. Latin America region is further segmented into Brazil, Mexico, and Rest of Latin America, and the MEA region is further divided into GCC, Turkey, South Africa, and Rest of MEA.
We have studied the High-k And CVD ALD Metal Precursors Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2028.
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