The Global Next-Generation Memory Market size is projected to grow from $7.5 billion in 2020 to $XX.X billion by 2028, at a CAGR of 24.3%. The rising demand for high-speed and low-power devices due to the increasing adoption of smartphones, tablets, computers, and other electronic products is projected to drive the growth over the forecast period.
Next-generation memory is a type of nonvolatile semiconductor storage that uses nanotechnology to store information. It holds great promise for increasing the speed and reliability of data processing, as well as expanding capacity at lower costs compared with DRAMs and other types of computer memory currently available. The benefits of next-generation memory include fast read/write speeds, high density, and low power consumption.
On the basis of Type, the global next-generation memory market is segmented into PCM, ReRAM, MRAM, and FeRAM.
Phase change memory (PCM) is a type of next-generation memory that uses chalcogenide glass as the storage medium. PCM has the ability to reversibly change its crystalline structure between amorphous and crystalline states, with each state representing a data “0” or “one.” PCM has the potential to be used as a universal memory due to its ability to read and write at extremely high speeds. There are many benefits of PCM type next-generation memory. First, it is nonvolatile and offers high endurance with low power consumption as compared to DRAMs (Dynamic Random Access Memory). Second, the material cost for this technology is lower than others such as MRAM (Magnetoresistive RAM) or RRAM (Resistance RAM). Lastly, manufacturers can easily integrate elements like capacitors in their designs to make them highly compact. Because of these advantages, PCM might be a good choice for use cases requiring ultrafast read/write speeds and large storage capacities since there would not be any need to sacrifice speed over capacity unlike other NAND flash technologies currently used by data centers today.
ReRAM (resistive random-access memory) is a nonvolatile computer storage technology that works by changing the resistance of the material used to store each bit. It uses an electronic effect called tunneling in which electrons can pass through solid matter with little effort when voltage is applied at one end, and it requires very low amounts of power. ReRAM is a type of next-generation memory that uses the resistance switching mechanism, which offers numerous benefits such as high scalability and low cost. It also provides better endurance levels due to its back-end process compatibility with most CMOS processes currently in production. This enables ReRAM to support many applications including consumer electronics, enterprise storage, automotive systems, etc. and ensures its mass commercialization. In addition to this, ReRAM provides a wide range of memory types that can be used for the same application depending on the requirements such as write speed, power consumption, and endurance levels. It also supports both standalone and embedded systems which makes it highly scalable compared to other NVM technologies.
MRAM is a non-volatile memory that is capable of performing read and write operations in nanoseconds. It can store information even when there’s no power supply, unlike the other types of next-generation memories such as PCM and ReRAM. The MRAM technology also has high data retention capabilities making it more reliable than all other kinds of emerging memories. It's anticipated that due to its advantages over flash storage technologies like NAND, MRAM could substitute it across many applications from consumer electronics to enterprise storage devices. There are a few benefits of the MRAM type of next-generation memory, which include: Low latency and high performance, High endurance, and retention, Non-volatility, Reliability, Low power consumption.
FeRAM is a type of next-generation memory known as Ferroelectric RAM. It is one of the most promising non-volatile random access memories (NVRAMs). FeRAM works on the principles of ferroelectricity which means that they are based on materials with spontaneous polarization occurring on an atomic scale due to an internal electric field generated by their own charge carriers. This property makes them have multibit storage capability, much faster write speeds, and very low power consumption compared to conventional NAND flash or DRAM technologies. They can perform about 100,000 times reading operations before wearing out which is much higher than flash memory.
On the basis of Application, the global next-generation memory market is segmented into Enterprise Storage, Automotive and Transportation, Military and Aerospace, Telecommunications, Others.
The Enterprise Storage industry is using next-generation memory to improve the performance, security, and reliability of storage systems. Next-generation memory will be used in enterprise applications such as server farms for data processing, high-end work stations with multiple CPUs, servers hosting databases, etc., where bandwidth between processors and memories are critical determinants of system performance.
Next-generation memory enables high-density data storage and is used in the automotive industry to store important information such as driving patterns, engine performance, fuel consumption, etc. Next-generation memory is expected to have a broad range of applications in the transportation industry. The technology can help improve the safety, security, and efficiency of transportation networks through accurate location tracking & navigation on both land and sea. In addition, companies are using next-generation memory for advanced vehicle management systems that will be used by fleet managers to track their vehicles’ status easily while reducing maintenance costs at the same time.
The military sector is using next-generation memory devices for various purposes such as storage and networking, command and control systems. There are many new applications of NGM technology that will emerge in the coming years with the increasing research activities related to this field. Next-generation memory is expected to find applications in the aerospace sector for its ultra-high-speed and nonvolatility. These properties are highly beneficial when it comes to military aircraft, unmanned aerial vehicles (UAVs), missiles, or spacecraft that need high levels of reliability because any chance of data loss can be dangerous.
The Telecommunications industry uses next-generation memory for a variety of applications including mobile phones, personal computers, and servers. The telecommunications sector is using next-generation memory to increase the storage capacity of their servers. This helps them with power efficiency and data performance, resulting in lower energy consumption for businesses that are online most hours of the day.
On the basis of Region, the global next-generation memory market is segmented into North America, Latin America Europe, Asia Pacific, and Middle East & Africa. North America was the leading next-generation memories market with the highest revenue generation across the globe. Asia Pacific region is expected to have major growth, owing to increasing demand for consumer electronics devices in countries such as China and India. South Korea has emerged as a key country in the area of next-generation memory research & development activities due to its strong semiconductor industry base.
There are three factors driving the growth of The global next-generation memory market. First, the growing demand for faster data processing is expected to drive the industry during this period. Next-generation memories provide better bandwidth and latency performance than conventional memories such as DRAMs (Dynamic Random Access Memory) & SRAMs (Static Random Access Memory). Secondly, increasing IoT devices is also expected to boost the demand in the coming years. Emerging markets such as the U.S, China, and India are expected to account for a large market share in coming years. Lastly, growth of the artificial intelligence technology is another factor driving this industry.
Up Market Research published a new report titled “Next Generation Memory Sales Market research report which is segmented by Types (PCM, ReRAM, MRAM, FeRAM), By Applications (Consumer Electronics, Enterprise Storage, Automotive and Transportation, Military and Aerospace, Telecommunications, Others), By Players/Companies Intel, Micron Technology, Panasonic, Cypress Semiconductor, Fujitsu, Everspin, ROHM Semiconductor, Adesto Technologies, Crossbar”. As per the study the market is expected to grow at a CAGR of XX% in the forecast period.
Report Attributes | Report Details |
Report Title | Next Generation Memory Sales Market Research Report |
By Type | PCM, ReRAM, MRAM, FeRAM |
By Application | Consumer Electronics, Enterprise Storage, Automotive and Transportation, Military and Aerospace, Telecommunications, Others |
By Companies | Intel, Micron Technology, Panasonic, Cypress Semiconductor, Fujitsu, Everspin, ROHM Semiconductor, Adesto Technologies, Crossbar |
Regions Covered | North America, Europe, APAC, Latin America, MEA |
Base Year | 2020 |
Historical Year | 2018 to 2019 (Data from 2010 can be provided as per availability) |
Forecast Year | 2028 |
Number of Pages | 205 |
Number of Tables & Figures | 144 |
Customization Available | Yes, the report can be customized as per your need. |
The report covers comprehensive data on emerging trends, market drivers, growth opportunities, and restraints that can change the market dynamics of the industry. It provides an in-depth analysis of the market segments which include products, applications, and competitor analysis.
The market is segmented by Type PCM, ReRAM, MRAM, FeRAM and By Application Consumer Electronics, Enterprise Storage, Automotive and Transportation, Military and Aerospace, Telecommunications, Others.
Some of the companies that are profiled in this report are:
Next Generation Memory Sales Market research report delivers a close watch on leading competitors with strategic analysis, micro and macro market trend and scenarios, pricing analysis and a holistic overview of the market situations in the forecast period. It is a professional and a detailed report focusing on primary and secondary drivers, market share, leading segments and geographical analysis. Further, key players, major collaborations, merger & acquisitions along with trending innovation and business policies are reviewed in the report.
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Based on region, the market is segmented into North America, Europe, Asia Pacific, Latin America and Middle East & Africa (MEA). North America region is further bifurcated into countries such as U.S., and Canada. The Europe region is further categorized into U.K., France, Germany, Italy, Spain, Russia, and Rest of Europe. Asia Pacific is further segmented into China, Japan, South Korea, India, Australia, South East Asia, and Rest of Asia Pacific. Latin America region is further segmented into Brazil, Mexico, and Rest of Latin America, and the MEA region is further divided into GCC, Turkey, South Africa, and Rest of MEA.
We have studied the Next Generation Memory Sales Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2028.
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